NX3008PBKMB,315
MOSFET P-CH 30V 300MA DFN1006B-3
Transistors Fets Mosfets Single
SC-101, SOT-883
TrenchMOS™
Active
$0.03 / unit (market reference)
MOQ: 11053 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | NX3008PBKMB,315 |
| Package / Case | SC-101, SOT-883 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 4.1Ohm @ 200mA, 4.5V |
| Vgs(th) (Max) | 1.1V @ 250µA |
| Gate Charge (Qg) | 0.72 nC @ 4.5 V |
| Input Capacitance (Ciss) | 46 pF @ 15 V |
| Power Dissipation (Max) | 360mW (Ta), 2.7W (Tc) |
| Supplier Device Package | DFN1006B-3 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
NX3008PBKMB,315 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SC-101, SOT-883 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 4.1Ohm @ 200mA, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for NX3008PBKMB,315
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All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Rds On (Max) @ Id, Vgs | 4.1Ohm @ 200mA, 4.5V |
| Power Dissipation (Max) | 360mW (Ta), 2.7W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 0.72 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 46 pF @ 15 V |
| Current - Continuous Drain (Id) @ 25°C | 300mA (Ta) |
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