NEXPERIA PMZ950UPE - 20V, P-CHAN

Transistors Fets Mosfets Single
SC-101, SOT-883
Active
$0.04 / unit (market reference)
MOQ: 7176 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | PMZ950UPEYL |
| Package / Case | SC-101, SOT-883 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 20 V |
| Rds On (Max) | 1.4Ohm @ 500mA, 4.5V |
| Vgs(th) (Max) | 950mV @ 250µA |
| Gate Charge (Qg) | 2.1 nC @ 4.5 V |
| Input Capacitance (Ciss) | 43 pF @ 10 V |
| Power Dissipation (Max) | 360mW (Ta), 2.7W (Tc) |
| Drive Voltage | 1.2V, 4.5V |
| Supplier Device Package | SOT-883 |
| RoHS | RoHS |
| Part Status | Active |
PMZ950UPEYL by Rochester Electronics, LLC is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SC-101, SOT-883 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1.4Ohm @ 500mA, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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| FET Type | P-Channel |
| Vgs (Max) | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 500mA, 4.5V |
| Power Dissipation (Max) | 360mW (Ta), 2.7W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 2.1 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 43 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 500mA (Ta) |
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