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Nexperia USA Inc.3-XDFN Exposed PadRoHS

PMXB65UPEZ

MOSFET P-CH 12V 3.2A DFN1010D-3

PMXB65UPEZ by Nexperia USA Inc.
Subcategory

Transistors Fets Mosfets Single

Package

3-XDFN Exposed Pad

Status

Active

$0.50 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandNexperia USA Inc.
ModelPMXB65UPEZ
Package / Case3-XDFN Exposed Pad
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeP-Channel
Drain to Source Voltage (Vdss)12 V
Rds On (Max)72mOhm @ 3.2A, 4.5V
Vgs(th) (Max)1V @ 250µA
Gate Charge (Qg)12 nC @ 4.5 V
Input Capacitance (Ciss)634 pF @ 6 V
Power Dissipation (Max)317mW (Ta), 8.33W (Tc)
Drive Voltage1.2V, 4.5V
Supplier Device PackageDFN1010D-3
RoHSRoHS
Part StatusActive

Application & Notes

PMXB65UPEZ by Nexperia USA Inc. is an N-channel power MOSFET rated at 12 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 3-XDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 72mOhm @ 3.2A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeP-Channel
Vgs (Max)±8V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 250µA
Rds On (Max) @ Id, Vgs72mOhm @ 3.2A, 4.5V
Power Dissipation (Max)317mW (Ta), 8.33W (Tc)
Gate Charge (Qg) (Max) @ Vgs12 nC @ 4.5 V
Drain to Source Voltage (Vdss)12 V
Input Capacitance (Ciss) (Max) @ Vds634 pF @ 6 V
Drive Voltage (Max Rds On, Min Rds On)1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C3.2A (Ta)

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