BSS84AKQBZ
BSS84AKQB/SOT8015/DFN1110D-3
Transistors Fets Mosfets Single
3-XDFN Exposed Pad
Active
$0.47 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Nexperia USA Inc. |
| Model | BSS84AKQBZ |
| Package / Case | 3-XDFN Exposed Pad |
| Mounting Type | Surface Mount, Wettable Flank |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 50 V |
| Rds On (Max) | 7.5Ohm @ 100mA, 10V |
| Vgs(th) (Max) | 2.1V @ 250µA |
| Gate Charge (Qg) | 0.6 nC @ 10 V |
| Input Capacitance (Ciss) | 23.2 pF @ 25 V |
| Power Dissipation (Max) | 420mW (Ta), 4.2W (Tc) |
| Drive Voltage | 4.5V, 10V |
| Supplier Device Package | DFN1110D-3 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
BSS84AKQBZ by Nexperia USA Inc. is an N-channel power MOSFET rated at 50 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 3-XDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 7.5Ohm @ 100mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for BSS84AKQBZ
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All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | +12V, -20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Rds On (Max) @ Id, Vgs | 7.5Ohm @ 100mA, 10V |
| Power Dissipation (Max) | 420mW (Ta), 4.2W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 0.6 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 50 V |
| Input Capacitance (Ciss) (Max) @ Vds | 23.2 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 270mA (Ta) |
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