Nexperia USA Inc.3-XDFN Exposed PadRoHS
PMXB350UPEZ
MOSFET P-CH 20V 1.2A DFN1010D-3
Category
Subcategory
Transistors Fets Mosfets Single
Package
3-XDFN Exposed Pad
Status
Active
Datasheet
$0.46 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Nexperia USA Inc. |
| Model | PMXB350UPEZ |
| Package / Case | 3-XDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 20 V |
| Rds On (Max) | 447mOhm @ 1.2A, 4.5V |
| Vgs(th) (Max) | 950mV @ 250µA |
| Gate Charge (Qg) | 2.3 nC @ 4.5 V |
| Input Capacitance (Ciss) | 116 pF @ 10 V |
| Power Dissipation (Max) | 360mW (Ta), 5.68W (Tc) |
| Drive Voltage | 1.2V, 4.5V |
| Supplier Device Package | DFN1010D-3 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
PMXB350UPEZ by Nexperia USA Inc. is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 3-XDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 447mOhm @ 1.2A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for PMXB350UPEZ
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All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±8V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Rds On (Max) @ Id, Vgs | 447mOhm @ 1.2A, 4.5V |
| Power Dissipation (Max) | 360mW (Ta), 5.68W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 2.3 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 116 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 1.2A (Ta) |
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