PMPB95ENEA/FX
MOSFET N-CH 80V 4.1A 6DFN
Transistors Fets Mosfets Single
6-UDFN Exposed Pad
Automotive, AEC-Q101
Active
$0.18 / unit (market reference)
MOQ: 3000 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Nexperia USA Inc. |
| Model | PMPB95ENEA/FX |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 80 V |
| Rds On (Max) | 105mOhm @ 2.8A, 10V |
| Vgs(th) (Max) | 2.7V @ 250µA |
| Gate Charge (Qg) | 14.9 nC @ 10 V |
| Input Capacitance (Ciss) | 504 pF @ 40 V |
| Power Dissipation (Max) | 1.6W (Ta) |
| Drive Voltage | 4.5V, 10V |
| Supplier Device Package | DFN2020MD-6 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
PMPB95ENEA/FX by Nexperia USA Inc. is an N-channel power MOSFET rated at 80 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-UDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 105mOhm @ 2.8A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for PMPB95ENEA/FX
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MOSFET N-CH 20V 7.9A 6DFN
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.7V @ 250µA |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 2.8A, 10V |
| Power Dissipation (Max) | 1.6W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 14.9 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 80 V |
| Input Capacitance (Ciss) (Max) @ Vds | 504 pF @ 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 4.1A (Ta) |
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