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NXP USA Inc.6-UDFN Exposed PadRoHS

PMPB12UN,115

MOSFET N-CH 20V 7.9A 6DFN

PMPB12UN,115 by NXP USA Inc.
Subcategory

Transistors Fets Mosfets Single

Package

6-UDFN Exposed Pad

Status

Obsolete

$0.22 / unit (market reference)

MOQ: 1374 pcs

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Parameters

ParameterValue
BrandNXP USA Inc.
ModelPMPB12UN,115
Package / Case6-UDFN Exposed Pad
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)20 V
Rds On (Max)18mOhm @ 7.9A, 4.5V
Vgs(th) (Max)1V @ 250µA
Gate Charge (Qg)13 nC @ 4.5 V
Input Capacitance (Ciss)886 pF @ 10 V
Power Dissipation (Max)1.7W (Ta), 12.5W (Tc)
Drive Voltage1.8V, 4.5V
Supplier Device Package6-DFN2020MD (2x2)
RoHSRoHS
Part StatusObsolete

Application & Notes

PMPB12UN,115 by NXP USA Inc. is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-UDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 18mOhm @ 7.9A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for PMPB12UN,115

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MOSFET Alternatives: IRFZ44N, AO3400, IRF4905 & More — Cross Reference Guide

Components Guide

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Power Discrete Alternatives Guide: MOSFET, IGBT, SiC, GaN Cross-Reference

Components Guide

Alternatives & Replacements

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Rochester Electronics, LLCStock6-UDFN Exposed Pad

PMPB27EP,115

30 V, SINGLE P-CHANNEL TRENCH MO

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Alpha & Omega Semiconductor Inc.Stock6-UDFN Exposed Pad

AON2260

MOSFET N-CH 60V 6A 6DFN

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onsemiStock6-UDFN Exposed Pad

NTLUS3A18PZCTAG

MOSFET P-CH 20V 5.1A 6UDFN

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onsemiStock6-UDFN Exposed Pad

NTLUS4930NTBG

MOSFET N-CH 30V 3.8A 6UDFN

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NXP USA Inc.Stock6-UDFN Exposed Pad

PMPB16XN,115

MOSFET N-CH 30V 7.2A 6DFN

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onsemiStock6-UDFN Exposed Pad

NTLUS3A40PZCTAG

MOSFET P-CH 20V 4A 6UDFN

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±8V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 250µA
Rds On (Max) @ Id, Vgs18mOhm @ 7.9A, 4.5V
Power Dissipation (Max)1.7W (Ta), 12.5W (Tc)
Gate Charge (Qg) (Max) @ Vgs13 nC @ 4.5 V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds886 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C7.9A (Ta)

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