NXP USA Inc.6-UDFN Exposed PadRoHS
PMPB16XN,115
MOSFET N-CH 30V 7.2A 6DFN
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Category
Subcategory
Transistors Fets Mosfets Single
Package
6-UDFN Exposed Pad
Status
Obsolete
$0.08 / unit (market reference)
MOQ: 3606 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | NXP USA Inc. |
| Model | PMPB16XN,115 |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 21mOhm @ 7.2A, 4.5V |
| Vgs(th) (Max) | 1.5V @ 250µA |
| Gate Charge (Qg) | 10.8 nC @ 4.5 V |
| Input Capacitance (Ciss) | 775 pF @ 15 V |
| Power Dissipation (Max) | 1.7W (Ta), 12.5W (Tc) |
| Drive Voltage | 2.5V, 4.5V |
| Supplier Device Package | 6-DFN2020MD (2x2) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
PMPB16XN,115 by NXP USA Inc. is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-UDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 21mOhm @ 7.2A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for PMPB16XN,115
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±12V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 7.2A, 4.5V |
| Power Dissipation (Max) | 1.7W (Ta), 12.5W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 10.8 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 775 pF @ 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 7.2A (Ta) |
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