PC
Nexperia USA Inc.6-UDFN Exposed PadRoHS

PMPB29XPE,115

MOSFET P-CH 20V 5A DFN2020MD-6

PMPB29XPE,115 by Nexperia USA Inc.
Subcategory

Transistors Fets Mosfets Single

Package

6-UDFN Exposed Pad

Status

Active

$0.45 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandNexperia USA Inc.
ModelPMPB29XPE,115
Package / Case6-UDFN Exposed Pad
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeP-Channel
Drain to Source Voltage (Vdss)20 V
Rds On (Max)32.5mOhm @ 5A, 4.5V
Vgs(th) (Max)900mV @ 250µA
Gate Charge (Qg)45 nC @ 4.5 V
Input Capacitance (Ciss)2970 pF @ 10 V
Power Dissipation (Max)1.7W (Ta), 12.5W (Tc)
Drive Voltage1.8V, 4.5V
Supplier Device PackageDFN2020MD-6
RoHSRoHS
Part StatusActive

Application & Notes

PMPB29XPE,115 by Nexperia USA Inc. is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-UDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 32.5mOhm @ 5A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeP-Channel
Vgs (Max)±12V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id900mV @ 250µA
Rds On (Max) @ Id, Vgs32.5mOhm @ 5A, 4.5V
Power Dissipation (Max)1.7W (Ta), 12.5W (Tc)
Gate Charge (Qg) (Max) @ Vgs45 nC @ 4.5 V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds2970 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C5A (Ta)

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