PC
Rochester Electronics, LLC6-UDFN Exposed PadRoHS

PMPB23XNEAX

PMPB23XNEA - 20 V, N-CHANNEL TRE

PMPB23XNEAX by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

6-UDFN Exposed Pad

Series

Automotive, AEC-Q101, TrenchMOS™

Status

Active

$0.10 / unit (market reference)

MOQ: 3153 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelPMPB23XNEAX
Package / Case6-UDFN Exposed Pad
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)20 V
Rds On (Max)22mOhm @ 7A, 4.5V
Vgs(th) (Max)0.9V @ 250µA
Gate Charge (Qg)17 nC @ 4.5 V
Input Capacitance (Ciss)1136 pF @ 10 V
Power Dissipation (Max)1.7W (Ta), 12.5W (Tc)
Drive Voltage1.8V, 4.5V
Supplier Device PackageDFN2020MD-6
RoHSRoHS
Part StatusActive

Application & Notes

PMPB23XNEAX by Rochester Electronics, LLC is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-UDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 22mOhm @ 7A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±12V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id0.9V @ 250µA
Rds On (Max) @ Id, Vgs22mOhm @ 7A, 4.5V
Power Dissipation (Max)1.7W (Ta), 12.5W (Tc)
Gate Charge (Qg) (Max) @ Vgs17 nC @ 4.5 V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds1136 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C7A (Ta)

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