PC
Nexperia USA Inc.6-XFDFN Exposed PadRoHS

PMDXB1200UPEZ

MOSFET 2P-CH 30V 0.41A 6DFN

PMDXB1200UPEZ by Nexperia USA Inc.
Subcategory

Transistors Fets Mosfets Arrays

Package

6-XFDFN Exposed Pad

Status

Active

$0.53 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

✅ 365-Day Warranty🚚 Global Shipping

Parameters

ParameterValue
BrandNexperia USA Inc.
ModelPMDXB1200UPEZ
Package / Case6-XFDFN Exposed Pad
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET Type2 P-Channel (Dual)
Drain to Source Voltage (Vdss)30V
Rds On (Max)1.4Ohm @ 410mA, 4.5V
Vgs(th) (Max)950mV @ 250µA
Gate Charge (Qg)1.2nC @ 4.5V
Input Capacitance (Ciss)43.2pF @ 15V
Power Dissipation (Max)285mW
Supplier Device PackageDFN1010B-6
RoHSRoHS
Part StatusActive

Application & Notes

PMDXB1200UPEZ by Nexperia USA Inc. is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-XFDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1.4Ohm @ 410mA, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET Type2 P-Channel (Dual)
FET FeatureStandard
Power - Max285mW
Vgs(th) (Max) @ Id950mV @ 250µA
Rds On (Max) @ Id, Vgs1.4Ohm @ 410mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs1.2nC @ 4.5V
Drain to Source Voltage (Vdss)30V
Input Capacitance (Ciss) (Max) @ Vds43.2pF @ 15V
Current - Continuous Drain (Id) @ 25°C410mA

Request a Quote

Submit your quantity and details — we will reply within 24 hours.