PMCXB900UEZ
MOSFET N/P-CH 20V 600/500MA 6DFN
Transistors Fets Mosfets Arrays
6-XFDFN Exposed Pad
TrenchFET®
Active
$0.41 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Nexperia USA Inc. |
| Model | PMCXB900UEZ |
| Package / Case | 6-XFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N and P-Channel Complementary |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) | 620mOhm @ 600mA, 4.5V |
| Vgs(th) (Max) | 950mV @ 250µA |
| Gate Charge (Qg) | 0.7nC @ 4.5V |
| Input Capacitance (Ciss) | 21.3pF @ 10V |
| Power Dissipation (Max) | 265mW |
| Supplier Device Package | DFN1010B-6 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
PMCXB900UEZ by Nexperia USA Inc. is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-XFDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 620mOhm @ 600mA, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for PMCXB900UEZ
Alternatives & Replacements
View All →PMDXB950UPEZ
MOSFET 2P-CH 20V 0.5A 6DFN
DMC3730UFL3-7
MOSFET N/P-CHA 30V 1.1A DFN1310
PMDXB550UNEZ
MOSFET 2N-CH 30V 0.59A 6DFN
PMDXB1200UPEZ
MOSFET 2P-CH 30V 0.41A 6DFN
PMCXB900UELZ
20 V, COMPLEMENTARY N/P-CHANNEL
PMDXB600UNELZ
20 V, DUAL N-CHANNEL TRENCH MOSF
All Technical Specifications
| FET Type | N and P-Channel Complementary |
| FET Feature | Logic Level Gate |
| Power - Max | 265mW |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Rds On (Max) @ Id, Vgs | 620mOhm @ 600mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 0.7nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 21.3pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 600mA, 500mA |
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