PC
Diodes Incorporated6-XFDFN Exposed PadRoHS

DMC3730UFL3-7

MOSFET N/P-CHA 30V 1.1A DFN1310

DMC3730UFL3-7 by Diodes Incorporated
Subcategory

Transistors Fets Mosfets Arrays

Package

6-XFDFN Exposed Pad

Series

Automotive, AEC-Q101

Status

Active

$0.53 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandDiodes Incorporated
ModelDMC3730UFL3-7
Package / Case6-XFDFN Exposed Pad
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN and P-Channel Complementary
Drain to Source Voltage (Vdss)30V
Rds On (Max)460mOhm @ 200mA, 4.5V
Vgs(th) (Max)950mV @ 250µA
Gate Charge (Qg)0.9nC @ 4.5V
Input Capacitance (Ciss)65.9pF @ 25V
Power Dissipation (Max)390mW
Supplier Device PackageX2-DFN1310-6 (Type B)
RoHSRoHS
Part StatusActive

Application & Notes

DMC3730UFL3-7 by Diodes Incorporated is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-XFDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 460mOhm @ 200mA, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN and P-Channel Complementary
FET FeatureStandard
Power - Max390mW
Vgs(th) (Max) @ Id950mV @ 250µA
Rds On (Max) @ Id, Vgs460mOhm @ 200mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs0.9nC @ 4.5V
Drain to Source Voltage (Vdss)30V
Input Capacitance (Ciss) (Max) @ Vds65.9pF @ 25V
Current - Continuous Drain (Id) @ 25°C1.1A, 700mA

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