Panjit International Inc.6-WDFN Exposed PadRoHS
PJQ2461_R1_00001
60V P-CHANNEL ENHANCEMENT MODE M
Category
Subcategory
Transistors Fets Mosfets Single
Package
6-WDFN Exposed Pad
Status
Active
$0.44 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Panjit International Inc. |
| Model | PJQ2461_R1_00001 |
| Package / Case | 6-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 60 V |
| Rds On (Max) | 190mOhm @ 2A, 10V |
| Vgs(th) (Max) | 2.5V @ 250µA |
| Gate Charge (Qg) | 8.3 nC @ 10 V |
| Input Capacitance (Ciss) | 430 pF @ 30 V |
| Power Dissipation (Max) | 2W (Ta) |
| Drive Voltage | 4.5V, 10V |
| Supplier Device Package | DFN2020B-6 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
PJQ2461_R1_00001 by Panjit International Inc. is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-WDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 190mOhm @ 2A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 2A, 10V |
| Power Dissipation (Max) | 2W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 8.3 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 430 pF @ 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Ta) |
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