Toshiba Semiconductor and Storage6-WDFN Exposed PadRoHS
SSM6J507NU,LF
MOSFET P-CH 30V 10A 6UDFNB
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Category
Subcategory
Transistors Fets Mosfets Single
Package
6-WDFN Exposed Pad
Series
U-MOSVI
Status
Active
Datasheet
$0.48 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Toshiba Semiconductor and Storage |
| Model | SSM6J507NU,LF |
| Package / Case | 6-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 20mOhm @ 4A, 10V |
| Vgs(th) (Max) | 2.2V @ 250µA |
| Gate Charge (Qg) | 20.4 nC @ 4.5 V |
| Input Capacitance (Ciss) | 1150 pF @ 15 V |
| Power Dissipation (Max) | 1.25W (Ta) |
| Drive Voltage | 4V, 10V |
| Supplier Device Package | 6-UDFNB (2x2) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
SSM6J507NU,LF by Toshiba Semiconductor and Storage is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-WDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 20mOhm @ 4A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for SSM6J507NU,LF
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All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | +20V, -25V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 4A, 10V |
| Power Dissipation (Max) | 1.25W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 20.4 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1150 pF @ 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
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