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onsemi6-WDFN Exposed PadRoHS

NTLJS4149PTBG

MOSFET P-CH 30V 2.7A 6WDFN

Subcategory

Transistors Fets Mosfets Single

Package

6-WDFN Exposed Pad

Status

Obsolete

$0.28 / unit (market reference)

MOQ: 1069 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
Brandonsemi
ModelNTLJS4149PTBG
Package / Case6-WDFN Exposed Pad
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeP-Channel
Drain to Source Voltage (Vdss)30 V
Rds On (Max)62mOhm @ 4.5A, 4.5V
Vgs(th) (Max)1V @ 250µA
Gate Charge (Qg)15 nC @ 4.5 V
Input Capacitance (Ciss)960 pF @ 15 V
Power Dissipation (Max)700mW (Ta)
Drive Voltage2.5V, 4.5V
Supplier Device Package6-WDFN (2x2)
RoHSRoHS
Part StatusObsolete

Application & Notes

NTLJS4149PTBG by onsemi is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-WDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 62mOhm @ 4.5A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET TypeP-Channel
Vgs (Max)±12V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 250µA
Rds On (Max) @ Id, Vgs62mOhm @ 4.5A, 4.5V
Power Dissipation (Max)700mW (Ta)
Gate Charge (Qg) (Max) @ Vgs15 nC @ 4.5 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds960 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C2.7A (Ta)

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