PC
Rochester Electronics, LLC8-SOIC (0.154", 3.90mm Width)RoHS

PHK12NQ03LT,518

NEXPERIA PHK12NQ03LT - 11.8A, 30

PHK12NQ03LT,518 by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

8-SOIC (0.154", 3.90mm Width)

Series

TrenchMOS™

Status

Active

$0.28 / unit (market reference)

MOQ: 1069 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelPHK12NQ03LT,518
Package / Case8-SOIC (0.154", 3.90mm Width)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)30 V
Rds On (Max)10.5mOhm @ 12A, 10V
Vgs(th) (Max)2V @ 250µA
Gate Charge (Qg)17.6 nC @ 5 V
Input Capacitance (Ciss)1335 pF @ 16 V
Power Dissipation (Max)2.5W (Ta)
Drive Voltage4.5V, 10V
Supplier Device Package8-SO
RoHSRoHS
Part StatusActive

Application & Notes

PHK12NQ03LT,518 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SOIC (0.154", 3.90mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 10.5mOhm @ 12A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 250µA
Rds On (Max) @ Id, Vgs10.5mOhm @ 12A, 10V
Power Dissipation (Max)2.5W (Ta)
Gate Charge (Qg) (Max) @ Vgs17.6 nC @ 5 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds1335 pF @ 16 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C11.8A (Tj)

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