PDTC123JQBZ
PDTC123JQB/SOT8015/DFN1110D-3
Transistors Bipolar Bjt Single Pre Biased
3-XDFN Exposed Pad
Active
$0.27 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Nexperia USA Inc. |
| Model | PDTC123JQBZ |
| Package / Case | 3-XDFN Exposed Pad |
| Mounting Type | Surface Mount, Wettable Flank |
| Power Dissipation (Max) | 340 mW |
| Supplier Device Package | DFN1110D-3 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
PDTC123JQBZ by Nexperia USA Inc. is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 3-XDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for PDTC123JQBZ
Alternatives & Replacements
View All →PDTA124EQAZ
TRANS PREBIAS PNP 50V DFN1010D-3
PDTC143EQAZ
TRANS PREBIAS NPN 50V DFN1010D-3
PDTD113EQAZ
TRANS PREBIAS NPN 50V DFN1010D-3
PDTD123YQAZ
TRANS PREBIAS NPN 50V DFN1010D-3
PDTB143EQA147
PDTB143EQA SMALL SIGNAL FET
PDTC114YQBZ
PDTC114YQB/SOT8015/DFN1110D-3
All Technical Specifications
| Power - Max | 340 mW |
| Transistor Type | PNP - Pre-Biased |
| Resistor - Base (R1) | 2.2 kOhms |
| Frequency - Transition | 180 MHz |
| Resistor - Emitter Base (R2) | 47 kOhms |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 250µA, 5mA |
| Current - Collector (Ic) (Max) | 100 mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
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