PDTB143EQA147
PDTB143EQA SMALL SIGNAL FET
Transistors Bipolar Bjt Single Pre Biased
3-XDFN Exposed Pad
PDTB143
Active
$0.03 / unit (market reference)
MOQ: 9879 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | PDTB143EQA147 |
| Package / Case | 3-XDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Power Dissipation (Max) | 325 mW |
| Supplier Device Package | DFN1010D-3 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
PDTB143EQA147 by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 3-XDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for PDTB143EQA147
Alternatives & Replacements
View All →PDTA124EQAZ
TRANS PREBIAS PNP 50V DFN1010D-3
PDTC143EQAZ
TRANS PREBIAS NPN 50V DFN1010D-3
PDTD113EQAZ
TRANS PREBIAS NPN 50V DFN1010D-3
PDTD123YQAZ
TRANS PREBIAS NPN 50V DFN1010D-3
PDTC114YQBZ
PDTC114YQB/SOT8015/DFN1110D-3
PDTA143XQBZ
PDTA143XQB/SOT8015/DFN1110D-3
All Technical Specifications
| Power - Max | 325 mW |
| Transistor Type | PNP - Pre-Biased |
| Resistor - Base (R1) | 4.7 kOhms |
| Frequency - Transition | 150 MHz |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
| Vce Saturation (Max) @ Ib, Ic | 100mV @ 2.5mA, 50mA |
| Current - Collector (Ic) (Max) | 500 mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 50mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.