PDTA124EQAZ
TRANS PREBIAS PNP 50V DFN1010D-3
Transistors Bipolar Bjt Single Pre Biased
3-XDFN Exposed Pad
Automotive, AEC-Q101
Active
$0.05 / unit (market reference)
MOQ: 5000 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Nexperia USA Inc. |
| Model | PDTA124EQAZ |
| Package / Case | 3-XDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Power Dissipation (Max) | 280 mW |
| Supplier Device Package | DFN1010D-3 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
PDTA124EQAZ by Nexperia USA Inc. is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 3-XDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for PDTA124EQAZ
Alternatives & Replacements
View All →PDTC143EQAZ
TRANS PREBIAS NPN 50V DFN1010D-3
PDTD113EQAZ
TRANS PREBIAS NPN 50V DFN1010D-3
PDTD123YQAZ
TRANS PREBIAS NPN 50V DFN1010D-3
PDTB143EQA147
PDTB143EQA SMALL SIGNAL FET
PDTC114YQBZ
PDTC114YQB/SOT8015/DFN1110D-3
PDTA143XQBZ
PDTA143XQB/SOT8015/DFN1110D-3
All Technical Specifications
| Power - Max | 280 mW |
| Transistor Type | PNP - Pre-Biased |
| Resistor - Base (R1) | 22 kOhms |
| Frequency - Transition | 180 MHz |
| Resistor - Emitter Base (R2) | 22 kOhms |
| Vce Saturation (Max) @ Ib, Ic | 150mV @ 500µA, 10mA |
| Current - Collector (Ic) (Max) | 100 mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.