NVMSD6N303R2G
MOSFET N-CH 30V 6A 8SOIC
Transistors Fets Mosfets Single
8-SOIC (0.154", 3.90mm Width)
Automotive, AEC-Q101
Obsolete
$0.47 / unit (market reference)
MOQ: 642 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | onsemi |
| Model | NVMSD6N303R2G |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 32mOhm @ 6A, 10V |
| Vgs(th) (Max) | 2.5V @ 250µA |
| Gate Charge (Qg) | 30 nC @ 10 V |
| Input Capacitance (Ciss) | 950 pF @ 24 V |
| Supplier Device Package | 8-SOIC |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
NVMSD6N303R2G by onsemi is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SOIC (0.154", 3.90mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 32mOhm @ 6A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for NVMSD6N303R2G
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All Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Schottky Diode (Isolated) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 32mOhm @ 6A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 950 pF @ 24 V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
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