PC
CategoriesBrandsBOMBlogAbout
onsemi8-PowerWDFNRoHS

NTTFS4985NFTWG

MOSFET N-CH 30V 16.3A/64A 8WDFN

NTTFS4985NFTWG by onsemi
Subcategory

Transistors Fets Mosfets Single

Package

8-PowerWDFN

Status

Last Time Buy

Datasheet

View Datasheet ↗

$0.56 / unit (market reference)

MOQ: 541 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

✅ 365-Day Warranty🚚 Global Shipping

Parameters

ParameterValue
Brandonsemi
ModelNTTFS4985NFTWG
Package / Case8-PowerWDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)30 V
Rds On (Max)3.5mOhm @ 20A, 10V
Vgs(th) (Max)2.3V @ 250µA
Gate Charge (Qg)29.4 nC @ 10 V
Input Capacitance (Ciss)2075 pF @ 15 V
Power Dissipation (Max)1.47W (Ta), 22.73W (Tc)
Drive Voltage4.5V, 10V
Supplier Device Package8-WDFN (3.3x3.3)
RoHSRoHS
Part StatusLast Time Buy

Application & Notes

NTTFS4985NFTWG by onsemi is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerWDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 3.5mOhm @ 20A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for NTTFS4985NFTWG

📄

MOSFET Alternatives: IRFZ44N, AO3400, IRF4905 & More — Cross Reference Guide

Components Guide

📄

Power Discrete Alternatives Guide: MOSFET, IGBT, SiC, GaN Cross-Reference

Components Guide

Alternatives & Replacements

View All →
Rochester Electronics, LLCStock8-PowerWDFN

RJK03M9DNS-00#J5

MOSFET N-CH 30V 14A 8HWSON

Request QuoteRFQ →
Rochester Electronics, LLCStock8-PowerWDFN

FDMC8327L

POWER FIELD-EFFECT TRANSISTOR, 1

Request QuoteRFQ →
Rochester Electronics, LLCStock8-PowerWDFN

FDMC8884

9A, 30V, 0.019OHM, N-CHANNEL POW

Request QuoteRFQ →
onsemiStock8-PowerWDFN

NTTFS4928NTWG

MOSFET N-CH 30V 7.3A/37A 8WDFN

Request QuoteRFQ →
Rochester Electronics, LLCStock8-PowerWDFN

RJK03C0DPA-00#J53

MOSFET N-CH 30V 70A 8WPAK

Request QuoteRFQ →
Rochester Electronics, LLCStock8-PowerWDFN

FDMC86106LZ

MOSFET N-CH 100V 3.3A POWER33

Request QuoteRFQ →

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.3V @ 250µA
Rds On (Max) @ Id, Vgs3.5mOhm @ 20A, 10V
Power Dissipation (Max)1.47W (Ta), 22.73W (Tc)
Gate Charge (Qg) (Max) @ Vgs29.4 nC @ 10 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds2075 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C16.3A (Ta), 64A (Tc)

Request a Quote

Submit your quantity and details — we will reply within 24 hours.