onsemi8-SOIC (0.154", 3.90mm Width)RoHS
NTMSD2P102R2SG
MOSFET P-CH 20V 2.3A 8SOIC
Category
Subcategory
Transistors Fets Mosfets Single
Package
8-SOIC (0.154", 3.90mm Width)
Status
Obsolete
$0.19 / unit (market reference)
MOQ: 1603 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | onsemi |
| Model | NTMSD2P102R2SG |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type | Surface Mount |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 20 V |
| Rds On (Max) | 90mOhm @ 2.4A, 4.5V |
| Gate Charge (Qg) | 18 nC @ 4.5 V |
| Input Capacitance (Ciss) | 750 pF @ 16 V |
| Supplier Device Package | 8-SOIC |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
NTMSD2P102R2SG by onsemi is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SOIC (0.154", 3.90mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 90mOhm @ 2.4A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for NTMSD2P102R2SG
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All Technical Specifications
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Schottky Diode (Isolated) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2.4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 16 V |
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Ta) |
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