PC
CategoriesBrandsBOMBlogAbout
NTE Electronics, IncTO-3P-3, SC-65-3RoHS

NTE2922

MOSFET N-CHANNEL 400V 16A TO3P

NTE2922 by NTE Electronics, Inc
Subcategory

Transistors Fets Mosfets Single

Package

TO-3P-3, SC-65-3

Status

Active

Datasheet

View Datasheet ↗

$10.88 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

✅ 365-Day Warranty🚚 Global Shipping

Parameters

ParameterValue
BrandNTE Electronics, Inc
ModelNTE2922
Package / CaseTO-3P-3, SC-65-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)400 V
Rds On (Max)300mOhm @ 8.9A, 10V
Vgs(th) (Max)4V @ 250µA
Gate Charge (Qg)150 nC @ 10 V
Input Capacitance (Ciss)2600 pF @ 25 V
Power Dissipation (Max)180W (Tc)
Drive Voltage10V
Supplier Device PackageTO-3P
RoHSRoHS
Part StatusActive

Application & Notes

NTE2922 by NTE Electronics, Inc is an N-channel power MOSFET rated at 400 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-3P-3, SC-65-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 300mOhm @ 8.9A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for NTE2922

📄

MOSFET Alternatives: IRFZ44N, AO3400, IRF4905 & More — Cross Reference Guide

Components Guide

📄

Power Discrete Alternatives Guide: MOSFET, IGBT, SiC, GaN Cross-Reference

Components Guide

Alternatives & Replacements

View All →
Rochester Electronics, LLCStockTO-3P-3, SC-65-3

FQA8N80

N-CHANNEL POWER MOSFET

Request QuoteRFQ →
Rochester Electronics, LLCStockTO-3P-3, SC-65-3

FDA20N50

MOSFET N-CH 500V 22A TO3PN

Request QuoteRFQ →
Rochester Electronics, LLCStockTO-3P-3, SC-65-3

RJK60S5DPK-M0#T0

MOSFET N-CH 600V 20A TO3PSG

Request QuoteRFQ →
Rochester Electronics, LLCStockTO-3P-3, SC-65-3

IRFP460C

MOSFET N-CH 500V 20A TO3P

Request QuoteRFQ →
Rochester Electronics, LLCStockTO-3P-3, SC-65-3

FQA10N80

MOSFET N-CH 800V 9.8A TO3P

Request QuoteRFQ →
Rochester Electronics, LLCStockTO-3P-3, SC-65-3

FQA10N60C

MOSFET N-CH 600V 10A TO3P

Request QuoteRFQ →

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA
Rds On (Max) @ Id, Vgs300mOhm @ 8.9A, 10V
Power Dissipation (Max)180W (Tc)
Gate Charge (Qg) (Max) @ Vgs150 nC @ 10 V
Drain to Source Voltage (Vdss)400 V
Input Capacitance (Ciss) (Max) @ Vds2600 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C16A (Tc)

Request a Quote

Submit your quantity and details — we will reply within 24 hours.