Rochester Electronics, LLCTO-3P-3, SC-65-3RoHS
FDA20N50
MOSFET N-CH 500V 22A TO3PN
Category
Subcategory
Transistors Fets Mosfets Single
Package
TO-3P-3, SC-65-3
Series
UniFET™
Status
Obsolete
$2.94 / unit (market reference)
MOQ: 102 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | FDA20N50 |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 500 V |
| Rds On (Max) | 230mOhm @ 11A, 10V |
| Vgs(th) (Max) | 5V @ 250µA |
| Gate Charge (Qg) | 59.5 nC @ 10 V |
| Input Capacitance (Ciss) | 3120 pF @ 25 V |
| Supplier Device Package | TO-3PN |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
FDA20N50 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 500 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-3P-3, SC-65-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 230mOhm @ 11A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 230mOhm @ 11A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 59.5 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 500 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3120 pF @ 25 V |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
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