Rochester Electronics, LLCTO-3P-3, SC-65-3RoHS
RJK60S5DPK-M0#T0
MOSFET N-CH 600V 20A TO3PSG
Category
Subcategory
Transistors Fets Mosfets Single
Package
TO-3P-3, SC-65-3
Status
Obsolete
Datasheet
$14.80 / unit (market reference)
MOQ: 21 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | RJK60S5DPK-M0#T0 |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 600 V |
| Rds On (Max) | 178mOhm @ 10A, 10V |
| Gate Charge (Qg) | 27 nC @ 10 V |
| Input Capacitance (Ciss) | 1600 pF @ 25 V |
| Supplier Device Package | TO-3PSG |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
RJK60S5DPK-M0#T0 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 600 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-3P-3, SC-65-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 178mOhm @ 10A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for RJK60S5DPK-M0#T0
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All Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Super Junction |
| Rds On (Max) @ Id, Vgs | 178mOhm @ 10A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 25 V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
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