NTE2378
MOSFET N-CHANNEL 900V 5A TO3P
Transistors Fets Mosfets Single
TO-3P-3, SC-65-3
Active
$6.98 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | NTE Electronics, Inc |
| Model | NTE2378 |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 900 V |
| Rds On (Max) | 3.6Ohm @ 2A, 10V |
| Vgs(th) (Max) | 3V @ 1mA |
| Input Capacitance (Ciss) | 700 pF @ 20 V |
| Power Dissipation (Max) | 120W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | TO-3P |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
NTE2378 by NTE Electronics, Inc is an N-channel power MOSFET rated at 900 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-3P-3, SC-65-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 3.6Ohm @ 2A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for NTE2378
Alternatives & Replacements
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N-CHANNEL POWER MOSFET
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FQA10N80
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FQA10N60C
MOSFET N-CH 600V 10A TO3P
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Rds On (Max) @ Id, Vgs | 3.6Ohm @ 2A, 10V |
| Power Dissipation (Max) | 120W (Tc) |
| Drain to Source Voltage (Vdss) | 900 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 20 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
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