PC
onsemiTO-263-7, D²Pak (6 Leads + Tab)RoHS

NTBGS3D5N06C

POWER MOSFET, 60 V, 3.7 M?, 127A

NTBGS3D5N06C by onsemi
Subcategory

Transistors Fets Mosfets Single

Package

TO-263-7, D²Pak (6 Leads + Tab)

Status

Active

$4.26 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

✅ 365-Day Warranty🚚 Global Shipping

Parameters

ParameterValue
Brandonsemi
ModelNTBGS3D5N06C
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)60 V
Rds On (Max)3.7mOhm @ 24A, 12V
Vgs(th) (Max)4V @ 122µA
Gate Charge (Qg)39 nC @ 10 V
Input Capacitance (Ciss)2430 pF @ 30 V
Power Dissipation (Max)3.7W (Ta), 115W (Tc)
Drive Voltage10V, 12V
Supplier Device PackageD2PAK-7
RoHSRoHS
Part StatusActive

Application & Notes

NTBGS3D5N06C by onsemi is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-7, D²Pak (6 Leads + Tab) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 3.7mOhm @ 24A, 12V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 122µA
Rds On (Max) @ Id, Vgs3.7mOhm @ 24A, 12V
Power Dissipation (Max)3.7W (Ta), 115W (Tc)
Gate Charge (Qg) (Max) @ Vgs39 nC @ 10 V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds2430 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On)10V, 12V
Current - Continuous Drain (Id) @ 25°C22A (Ta), 127A (Tc)

Request a Quote

Submit your quantity and details — we will reply within 24 hours.