NTBGS001N06C
POWER MOSFET, 60 V, 1.1 M?, 342
Transistors Fets Mosfets Single
TO-263-7, D²Pak (6 Leads + Tab)
Active
$8.51 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | onsemi |
| Model | NTBGS001N06C |
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 60 V |
| Rds On (Max) | 1.1mOhm @ 112A, 12V |
| Vgs(th) (Max) | 4V @ 562µA |
| Gate Charge (Qg) | 139 nC @ 10 V |
| Input Capacitance (Ciss) | 11110 pF @ 30 V |
| Power Dissipation (Max) | 3.7W (Ta), 245W (Tc) |
| Drive Voltage | 10V, 12V |
| Supplier Device Package | D2PAK (TO-263) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
NTBGS001N06C by onsemi is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-7, D²Pak (6 Leads + Tab) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1.1mOhm @ 112A, 12V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for NTBGS001N06C
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 562µA |
| Rds On (Max) @ Id, Vgs | 1.1mOhm @ 112A, 12V |
| Power Dissipation (Max) | 3.7W (Ta), 245W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 139 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 11110 pF @ 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V, 12V |
| Current - Continuous Drain (Id) @ 25°C | 42A (Ta), 342A (Tc) |
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