NAND01GR3B2BZA6E
IC FLASH 1GBIT PARALLEL 63VFBGA

Memory
63-TFBGA
Obsolete
Price available on request
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Micron Technology Inc. |
| Model | NAND01GR3B2BZA6E |
| Package / Case | 63-TFBGA |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.7V ~ 1.95V |
| Supplier Device Package | 63-VFBGA (9x11) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
NAND01GR3B2BZA6E by Micron Technology Inc. is a commonly used electronic component in the Memory category. Available in 63-TFBGA package with -40°C ~ 85°C (TA) operating temperature range. Contact us for datasheet, pricing, and availability.
📖 Technical Guides for NAND01GR3B2BZA6E
ESP32 vs STM32: Which MCU is Right for Your Project?
Components Guide
Chinese MCU Alternatives: GD32, AT32, APM32 & More — 40-80% Cost Savings vs ST/NXP/Microchip
Components Guide
Op-Amp Selection Guide: 8 Most Popular Types and When to Use Each
Components Guide
LM358 Alternatives & Replacements: Complete Pin-to-Pin Guide
Components Guide
Alternatives & Replacements
View All →CAT24S64C4ATR
IC EEPROM 64KBIT I2C 1MHZ 4WLCSP
CAT24C64C4CTR
IC EEPROM 64KBIT I2C 1MHZ 4WLCSP
CAT24S128C4UTR
IC EEPROM 128K I2C 1MHZ 4WLCSP
CAS24S128C4NTR
128 KB 12C CMOS SERIAL EEPROM WI
UPD43256BGU-70Y-E2
STANDARD SRAM, 32KX8, 70NS
AT34C02C-TH-T
IC EEPROM 2KBIT I2C 8TSSOP
All Technical Specifications
| Technology | FLASH - NAND |
| Access Time | 30 ns |
| Memory Size | 1Gb (128M x 8) |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Memory Interface | Parallel |
| Voltage - Supply | 1.7V ~ 1.95V |
| Write Cycle Time - Word, Page | 30ns |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.