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IXYSTO-220-3RoHS

IXDP20N60B

IGBT 600V 32A 140W TO220AB

Subcategory

Transistors Igbts Single

Package

TO-220-3

Status

Active

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandIXYS
ModelIXDP20N60B
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Power Dissipation (Max)140 W
Supplier Device PackageTO-220-3
RoHSRoHS
Part StatusActive

Application & Notes

IXDP20N60B by IXYS is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

IGBT TypeNPT
Input TypeStandard
Gate Charge70 nC
Power - Max140 W
Test Condition300V, 20A, 22Ohm, 15V
Switching Energy900µJ (on), 400µJ (off)
Vce(on) (Max) @ Vge, Ic2.8V @ 15V, 20A
Current - Collector (Ic) (Max)32 A
Current - Collector Pulsed (Icm)40 A
Voltage - Collector Emitter Breakdown (Max)600 V

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