IRGB4715DPBF
IGBT WITH RECOVERY DIODE
Transistors Igbts Single
TO-220-3
Obsolete
$1.12 / unit (market reference)
MOQ: 268 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | IRGB4715DPBF |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Power Dissipation (Max) | 100 W |
| Supplier Device Package | TO-220AB |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
IRGB4715DPBF by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IRGB4715DPBF
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All Technical Specifications
| Input Type | Standard |
| Gate Charge | 30 nC |
| Power - Max | 100 W |
| Test Condition | 400V, 8A, 50Ohm, 15V |
| Switching Energy | 200µJ (on), 90µJ (off) |
| Td (on/off) @ 25°C | 30ns/100ns |
| Vce(on) (Max) @ Vge, Ic | 2V @ 15V, 8A |
| Current - Collector (Ic) (Max) | 21 A |
| Current - Collector Pulsed (Icm) | 24 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
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