IRG6B330UDPBF
IGBT TRENCH 330V 70A TO220AB
Transistors Igbts Single
TO-220-3
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IRG6B330UDPBF |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 160 W |
| Supplier Device Package | TO-220AB |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
IRG6B330UDPBF by Infineon Technologies is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IRG6B330UDPBF
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All Technical Specifications
| IGBT Type | Trench |
| Input Type | Standard |
| Gate Charge | 85 nC |
| Power - Max | 160 W |
| Test Condition | 196V, 25A, 10Ohm |
| Td (on/off) @ 25°C | 47ns/176ns |
| Vce(on) (Max) @ Vge, Ic | 2.76V @ 15V, 120A |
| Reverse Recovery Time (trr) | 60 ns |
| Current - Collector (Ic) (Max) | 70 A |
| Voltage - Collector Emitter Breakdown (Max) | 330 V |
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