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Infineon TechnologiesDirectFET™ Isometric SQRoHS

IRF6721STR1PBF

MOSFET N-CH 30V 14A DIRECTFET

IRF6721STR1PBF by Infineon Technologies
Subcategory

Transistors Fets Mosfets Single

Package

DirectFET™ Isometric SQ

Series

HEXFET®

Status

Obsolete

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandInfineon Technologies
ModelIRF6721STR1PBF
Package / CaseDirectFET™ Isometric SQ
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)30 V
Rds On (Max)7.3mOhm @ 14A, 10V
Vgs(th) (Max)2.4V @ 25µA
Gate Charge (Qg)17 nC @ 4.5 V
Input Capacitance (Ciss)1430 pF @ 15 V
Power Dissipation (Max)2.2W (Ta), 42W (Tc)
Drive Voltage4.5V, 10V
Supplier Device PackageDIRECTFET™ SQ
RoHSRoHS
Part StatusObsolete

Application & Notes

IRF6721STR1PBF by Infineon Technologies is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The DirectFET™ Isometric SQ package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 7.3mOhm @ 14A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.4V @ 25µA
Rds On (Max) @ Id, Vgs7.3mOhm @ 14A, 10V
Power Dissipation (Max)2.2W (Ta), 42W (Tc)
Gate Charge (Qg) (Max) @ Vgs17 nC @ 4.5 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds1430 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C14A (Ta), 60A (Tc)

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