IRF6811STRPBF
MOSFET N-CH 25V 19A/74A DIRECTFT
Transistors Fets Mosfets Single
DirectFET™ Isometric SQ
DirectFET®
Active
$0.64 / unit (market reference)
MOQ: 466 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | IRF6811STRPBF |
| Package / Case | DirectFET™ Isometric SQ |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 25 V |
| Rds On (Max) | 3.7mOhm @ 19A, 10V |
| Vgs(th) (Max) | 2.1V @ 35µA |
| Gate Charge (Qg) | 17 nC @ 4.5 V |
| Input Capacitance (Ciss) | 1590 pF @ 13 V |
| Power Dissipation (Max) | 2.1W (Ta), 32W (Tc) |
| Supplier Device Package | DirectFET™ Isometric SQ |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IRF6811STRPBF by Rochester Electronics, LLC is an N-channel power MOSFET rated at 25 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The DirectFET™ Isometric SQ package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 3.7mOhm @ 19A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IRF6811STRPBF
Alternatives & Replacements
View All →IRF8327STRPBF
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IRF6811STRPBF-INF
DIRECTFET PLUS POWER MOSFET
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±16V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.1V @ 35µA |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 19A, 10V |
| Power Dissipation (Max) | 2.1W (Ta), 32W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 25 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1590 pF @ 13 V |
| Current - Continuous Drain (Id) @ 25°C | 19A (Ta), 74A (Tc) |
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