PC
Rochester Electronics, LLCDirectFET™ Isometric SQRoHS

IRF8327STRPBF

MOSFET N-CH 30V 14A/60A DIRECTFT

IRF8327STRPBF by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

DirectFET™ Isometric SQ

Status

Active

$0.52 / unit (market reference)

MOQ: 582 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

✅ 365-Day Warranty🚚 Global Shipping

Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelIRF8327STRPBF
Package / CaseDirectFET™ Isometric SQ
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)30 V
Rds On (Max)7.3mOhm @ 14A, 10V
Vgs(th) (Max)2.4V @ 25µA
Gate Charge (Qg)14 nC @ 4.5 V
Input Capacitance (Ciss)1430 pF @ 15 V
Power Dissipation (Max)2.2W (Ta), 42W (Tc)
Drive Voltage4.5V, 10V
Supplier Device PackageDIRECTFET™ SQ
RoHSRoHS
Part StatusActive

Application & Notes

IRF8327STRPBF by Rochester Electronics, LLC is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The DirectFET™ Isometric SQ package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 7.3mOhm @ 14A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.4V @ 25µA
Rds On (Max) @ Id, Vgs7.3mOhm @ 14A, 10V
Power Dissipation (Max)2.2W (Ta), 42W (Tc)
Gate Charge (Qg) (Max) @ Vgs14 nC @ 4.5 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds1430 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C14A (Ta), 60A (Tc)

Request a Quote

Submit your quantity and details — we will reply within 24 hours.