PC
Infineon TechnologiesTO-263-7, D²Pak (6 Leads + Tab)RoHS

IPB180P04P4L02ATMA1

MOSFET P-CH 40V 180A TO263-7

IPB180P04P4L02ATMA1 by Infineon Technologies
Subcategory

Transistors Fets Mosfets Single

Package

TO-263-7, D²Pak (6 Leads + Tab)

Series

OptiMOS™

Status

Not For New Designs

$3.80 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandInfineon Technologies
ModelIPB180P04P4L02ATMA1
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeP-Channel
Drain to Source Voltage (Vdss)40 V
Rds On (Max)2.4mOhm @ 100A, 10V
Vgs(th) (Max)2.2V @ 410µA
Gate Charge (Qg)286 nC @ 10 V
Input Capacitance (Ciss)18700 pF @ 25 V
Power Dissipation (Max)150W (Tc)
Drive Voltage4.5V, 10V
Supplier Device PackagePG-TO263-7-3
RoHSRoHS
Part StatusNot For New Designs

Application & Notes

IPB180P04P4L02ATMA1 by Infineon Technologies is an N-channel power MOSFET rated at 40 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-7, D²Pak (6 Leads + Tab) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 2.4mOhm @ 100A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeP-Channel
Vgs (Max)±16V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.2V @ 410µA
Rds On (Max) @ Id, Vgs2.4mOhm @ 100A, 10V
Power Dissipation (Max)150W (Tc)
Gate Charge (Qg) (Max) @ Vgs286 nC @ 10 V
Drain to Source Voltage (Vdss)40 V
Input Capacitance (Ciss) (Max) @ Vds18700 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C180A (Tc)

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