IKD04N60RAATMA1
IGBT TRENCH 600V 8A TO252-3
Transistors Igbts Single
TO-252-3, DPak (2 Leads + Tab), SC-63
TrenchStop™
Obsolete
$0.58 / unit (market reference)
MOQ: 516 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IKD04N60RAATMA1 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Power Dissipation (Max) | 75 W |
| Supplier Device Package | PG-TO252-3 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
IKD04N60RAATMA1 by Infineon Technologies is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IKD04N60RAATMA1
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All Technical Specifications
| IGBT Type | Trench |
| Input Type | Standard |
| Gate Charge | 27 nC |
| Power - Max | 75 W |
| Test Condition | 400V, 4A, 43Ohm, 15V |
| Switching Energy | 90µJ (on), 150µJ (off) |
| Td (on/off) @ 25°C | 14ns/146ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 4A |
| Reverse Recovery Time (trr) | 43 ns |
| Current - Collector (Ic) (Max) | 8 A |
| Current - Collector Pulsed (Icm) | 12 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
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