IGP01N120H2
POWER BIPOLAR TRANSISTOR NPN
Transistors Igbts Single
TO-220-3
Active
$0.55 / unit (market reference)
MOQ: 549 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | IGP01N120H2 |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 28 W |
| Supplier Device Package | PG-TO220-3-1 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IGP01N120H2 by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IGP01N120H2
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All Technical Specifications
| Input Type | Standard |
| Gate Charge | 8.6 nC |
| Power - Max | 28 W |
| Test Condition | 800V, 1A, 241Ohm, 15V |
| Switching Energy | 140µJ |
| Td (on/off) @ 25°C | 13ns/370ns |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 1A |
| Current - Collector (Ic) (Max) | 3.2 A |
| Current - Collector Pulsed (Icm) | 3.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
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