HUF75344A3
MOSFET N-CH 55V 75A TO3P
Transistors Fets Mosfets Single
TO-3P-3, SC-65-3
UltraFET™
Obsolete
$1.37 / unit (market reference)
MOQ: 219 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | HUF75344A3 |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 55 V |
| Rds On (Max) | 8mOhm @ 75A, 10V |
| Vgs(th) (Max) | 4V @ 250µA |
| Gate Charge (Qg) | 208 nC @ 20 V |
| Input Capacitance (Ciss) | 4855 pF @ 25 V |
| Power Dissipation (Max) | 288.5W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | TO-3P |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
HUF75344A3 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 55 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-3P-3, SC-65-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 8mOhm @ 75A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for HUF75344A3
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 75A, 10V |
| Power Dissipation (Max) | 288.5W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 208 nC @ 20 V |
| Drain to Source Voltage (Vdss) | 55 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4855 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
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