PC
onsemiTO-220-3RoHS

HGTP7N60A4

IGBT 600V 34A TO220-3

HGTP7N60A4 by onsemi
Subcategory

Transistors Igbts Single

Package

TO-220-3

Status

Obsolete

$1.26 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
Brandonsemi
ModelHGTP7N60A4
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Power Dissipation (Max)125 W
Supplier Device PackageTO-220-3
RoHSRoHS
Part StatusObsolete

Application & Notes

HGTP7N60A4 by onsemi is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

Input TypeStandard
Gate Charge37 nC
Power - Max125 W
Test Condition390V, 7A, 25Ohm, 15V
Switching Energy55µJ (on), 60µJ (off)
Td (on/off) @ 25°C11ns/100ns
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 7A
Current - Collector (Ic) (Max)34 A
Current - Collector Pulsed (Icm)56 A
Voltage - Collector Emitter Breakdown (Max)600 V

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