HGTP3N60B3
7A, 600V, UFS N-CHANNEL IGBT
Transistors Igbts Single
TO-220-3
Active
$0.48 / unit (market reference)
MOQ: 628 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | HGTP3N60B3 |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 33.3 W |
| Supplier Device Package | TO-220 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
HGTP3N60B3 by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for HGTP3N60B3
Alternatives & Replacements
View All →HGTP3N60A4
N-CHANNEL IGBT
HGTP12N60A4D
INSULATED GATE BIPOLAR TRANSISTO
SGP30N60HSXKSA1
IGBT 600V 41A 250W TO220-3
IRGB4B60KD1PBF
IRGB4B60K - IGBT WITH ULTRAFAST
SGP40N60UFTU
N-CHANNEL IGBT
SGP10N60A
IGBT, 20A, 600V, N-CHANNEL
All Technical Specifications
| Input Type | Standard |
| Gate Charge | 21 nC |
| Power - Max | 33.3 W |
| Test Condition | 480V, 3.5A, 82Ohm, 15V |
| Switching Energy | 66µJ (on), 88µJ (off) |
| Td (on/off) @ 25°C | 18ns/105ns |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 3.5A |
| Reverse Recovery Time (trr) | 16 ns |
| Current - Collector (Ic) (Max) | 7 A |
| Current - Collector Pulsed (Icm) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.