Rochester Electronics, LLC8-PowerWDFNRoHS
HAT2201WP-EL-E
15A, 100V, N-CHANNEL MOSFET
Category
Subcategory
Transistors Fets Mosfets Single
Package
8-PowerWDFN
Status
Active
Datasheet
$1.17 / unit (market reference)
MOQ: 257 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | HAT2201WP-EL-E |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 100 V |
| Rds On (Max) | 43mOhm @ 7.5A, 10V |
| Gate Charge (Qg) | 21 nC @ 10 V |
| Input Capacitance (Ciss) | 1450 pF @ 10 V |
| Supplier Device Package | 8-WPAK |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
HAT2201WP-EL-E by Rochester Electronics, LLC is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerWDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 43mOhm @ 7.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for HAT2201WP-EL-E
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All Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs | 43mOhm @ 7.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1450 pF @ 10 V |
| Current - Continuous Drain (Id) @ 25°C | 15A (Ta) |
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