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Rochester Electronics, LLCTO-3P-3, SC-65-3RoHS

FQA34N20L

MOSFET N-CH 200V 34A TO3P

FQA34N20L by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

TO-3P-3, SC-65-3

Series

QFET®

Status

Obsolete

Datasheet

View Datasheet ↗

$1.28 / unit (market reference)

MOQ: 235 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelFQA34N20L
Package / CaseTO-3P-3, SC-65-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)200 V
Rds On (Max)75mOhm @ 17A, 10V
Vgs(th) (Max)2V @ 250µA
Gate Charge (Qg)72 nC @ 5 V
Input Capacitance (Ciss)3900 pF @ 25 V
Power Dissipation (Max)210W (Tc)
Drive Voltage5V, 10V
Supplier Device PackageTO-3P
RoHSRoHS
Part StatusObsolete

Application & Notes

FQA34N20L by Rochester Electronics, LLC is an N-channel power MOSFET rated at 200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-3P-3, SC-65-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 75mOhm @ 17A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for FQA34N20L

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MOSFET N-CH 800V 9.8A TO3P

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FQA10N60C

MOSFET N-CH 600V 10A TO3P

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 250µA
Rds On (Max) @ Id, Vgs75mOhm @ 17A, 10V
Power Dissipation (Max)210W (Tc)
Gate Charge (Qg) (Max) @ Vgs72 nC @ 5 V
Drain to Source Voltage (Vdss)200 V
Input Capacitance (Ciss) (Max) @ Vds3900 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Current - Continuous Drain (Id) @ 25°C34A (Tc)

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