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Rochester Electronics, LLCTO-3P-3, SC-65-3RoHS

FQA13N80

MOSFET N-CH 800V 12.6A TO3PN

FQA13N80 by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

TO-3P-3, SC-65-3

Series

QFET®

Status

Obsolete

Datasheet

View Datasheet ↗

$2.20 / unit (market reference)

MOQ: 137 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelFQA13N80
Package / CaseTO-3P-3, SC-65-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)800 V
Rds On (Max)750mOhm @ 6.3A, 10V
Vgs(th) (Max)5V @ 250µA
Gate Charge (Qg)88 nC @ 10 V
Input Capacitance (Ciss)3500 pF @ 25 V
Power Dissipation (Max)300W (Tc)
Drive Voltage10V
Supplier Device PackageTO-3PN
RoHSRoHS
Part StatusObsolete

Application & Notes

FQA13N80 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 800 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-3P-3, SC-65-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 750mOhm @ 6.3A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for FQA13N80

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IRFP460C

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FQA10N80

MOSFET N-CH 800V 9.8A TO3P

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FQA10N60C

MOSFET N-CH 600V 10A TO3P

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id5V @ 250µA
Rds On (Max) @ Id, Vgs750mOhm @ 6.3A, 10V
Power Dissipation (Max)300W (Tc)
Gate Charge (Qg) (Max) @ Vgs88 nC @ 10 V
Drain to Source Voltage (Vdss)800 V
Input Capacitance (Ciss) (Max) @ Vds3500 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C12.6A (Tc)

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