Rochester Electronics, LLC8-SOIC (0.154", 3.90mm Width)RoHS
FDS2170N7
MOSFET N-CH 200V 3A 8SOIC
Category
Subcategory
Transistors Fets Mosfets Single
Package
8-SOIC (0.154", 3.90mm Width)
Series
PowerTrench®
Status
Obsolete
Datasheet
$2.01 / unit (market reference)
MOQ: 150 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | FDS2170N7 |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 200 V |
| Rds On (Max) | 128mOhm @ 3A, 10V |
| Vgs(th) (Max) | 4.5V @ 250µA |
| Gate Charge (Qg) | 36 nC @ 10 V |
| Input Capacitance (Ciss) | 1292 pF @ 100 V |
| Power Dissipation (Max) | 3W (Ta) |
| Drive Voltage | 10V |
| Supplier Device Package | 8-SO |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
FDS2170N7 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SOIC (0.154", 3.90mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 128mOhm @ 3A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FDS2170N7
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 128mOhm @ 3A, 10V |
| Power Dissipation (Max) | 3W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1292 pF @ 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
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