FDMC86320
POWER FIELD-EFFECT TRANSISTOR, 1
Transistors Fets Mosfets Single
8-PowerWDFN
PowerTrench®
Active
$0.84 / unit (market reference)
MOQ: 298 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | FDMC86320 |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 80 V |
| Rds On (Max) | 11.7mOhm @ 10.7A, 10V |
| Vgs(th) (Max) | 4.5V @ 250µA |
| Gate Charge (Qg) | 41 nC @ 10 V |
| Input Capacitance (Ciss) | 2640 pF @ 40 V |
| Power Dissipation (Max) | 2.3W (Ta), 40W (Tc) |
| Drive Voltage | 8V, 10V |
| Supplier Device Package | 8-MLP (3.3x3.3) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
FDMC86320 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 80 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerWDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 11.7mOhm @ 10.7A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FDMC86320
Alternatives & Replacements
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RJK03C0DPA-00#J53
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FDMC86106LZ
MOSFET N-CH 100V 3.3A POWER33
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 11.7mOhm @ 10.7A, 10V |
| Power Dissipation (Max) | 2.3W (Ta), 40W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 80 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2640 pF @ 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 10.7A (Ta), 22A (Tc) |
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