PC
Rochester Electronics, LLC8-PowerWDFNRoHS

FDMB668P

MOSFET P-CH 20V 6.1A 8MLP

FDMB668P by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

8-PowerWDFN

Series

PowerTrench®

Status

Obsolete

$0.25 / unit (market reference)

MOQ: 1202 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelFDMB668P
Package / Case8-PowerWDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeP-Channel
Drain to Source Voltage (Vdss)20 V
Rds On (Max)35mOhm @ 6.1A, 4.5V
Vgs(th) (Max)1V @ 250µA
Gate Charge (Qg)59 nC @ 10 V
Input Capacitance (Ciss)2085 pF @ 10 V
Power Dissipation (Max)1.9W (Ta)
Drive Voltage1.8V, 4.5V
Supplier Device Package8-MLP, MicroFET (3x1.9)
RoHSRoHS
Part StatusObsolete

Application & Notes

FDMB668P by Rochester Electronics, LLC is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerWDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 35mOhm @ 6.1A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeP-Channel
Vgs (Max)±8V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 250µA
Rds On (Max) @ Id, Vgs35mOhm @ 6.1A, 4.5V
Power Dissipation (Max)1.9W (Ta)
Gate Charge (Qg) (Max) @ Vgs59 nC @ 10 V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds2085 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Current - Continuous Drain (Id) @ 25°C6.1A (Ta)

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