FDFS2P102A
MOSFET P-CH 20V 3.3A 8SOIC
Transistors Fets Mosfets Single
8-SOIC (0.154", 3.90mm Width)
PowerTrench®
Obsolete
$1.00 / unit (market reference)
MOQ: 301 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | FDFS2P102A |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 20 V |
| Rds On (Max) | 125mOhm @ 3.3A, 10V |
| Vgs(th) (Max) | 3V @ 250µA |
| Gate Charge (Qg) | 3 nC @ 5 V |
| Input Capacitance (Ciss) | 182 pF @ 10 V |
| Power Dissipation (Max) | 900mW (Ta) |
| Drive Voltage | 4.5V, 10V |
| Supplier Device Package | 8-SOIC |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
FDFS2P102A by Rochester Electronics, LLC is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SOIC (0.154", 3.90mm Width) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 125mOhm @ 3.3A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FDFS2P102A
Alternatives & Replacements
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FDFS2P753Z
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All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Schottky Diode (Isolated) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 3.3A, 10V |
| Power Dissipation (Max) | 900mW (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 3 nC @ 5 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 182 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 3.3A (Ta) |
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