FDFMA3P029Z
MOSFET P-CH 30V 3.3A 6MICROFET
Transistors Fets Mosfets Single
6-WDFN Exposed Pad
PowerTrench®
Active
$0.25 / unit (market reference)
MOQ: 1202 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | FDFMA3P029Z |
| Package / Case | 6-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 87mOhm @ 3.3A, 10V |
| Vgs(th) (Max) | 3V @ 250µA |
| Gate Charge (Qg) | 10 nC @ 10 V |
| Input Capacitance (Ciss) | 435 pF @ 15 V |
| Power Dissipation (Max) | 1.4W (Ta) |
| Supplier Device Package | 6-MLP (2x2) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
FDFMA3P029Z by Rochester Electronics, LLC is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-WDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 87mOhm @ 3.3A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FDFMA3P029Z
Alternatives & Replacements
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SSM6J507NU,LF
MOSFET P-CH 30V 10A 6UDFNB
All Technical Specifications
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| FET Feature | Schottky Diode (Isolated) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Rds On (Max) @ Id, Vgs | 87mOhm @ 3.3A, 10V |
| Power Dissipation (Max) | 1.4W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 435 pF @ 15 V |
| Current - Continuous Drain (Id) @ 25°C | 3.3A (Ta) |
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